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1

[IEEE 2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems - COMCAS - Tel Aviv, Israel (2009.11.9-2009.11.11)] 2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems - Design considerations for GaN based MMICs

Campbell, Charles F., Dumka, Deep C., Kao, Ming-Yih

Рік:

2009

Мова:

english

Файл:

PDF, 494 KB

english, 2009

2

A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology

Campbell, C., Lee, C., Williams, V., Ming-Yih Kao, Hua-Quen Tserng, Saunier, P., Balisteri, T.

Журнал:

IEEE Journal of Solid-State Circuits

Рік:

2009

Мова:

english

Файл:

PDF, 1.18 MB

english, 2009

3

[IEEE 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012 - Montreal, QC, Canada (2012.06.17-2012.06.22)] 2012 IEEE/MTT-S International Microwave Symposium Digest - High efficiency Ka-band power amplifier MMICs fabricated with a 0.15µm GaN on SiC HEMT process

Campbell, Charles F., Ming-Yih Kao,, Nayak, Sabyasachi

Рік:

2012

Мова:

english

Файл:

PDF, 812 KB

english, 2012

4

[IEEE 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Waikoloa, HI, USA (2011.10.16-2011.10.19)] 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - High Efficiency Ka-Band Power Amplifier MMIC Utilizing a High Voltage Dual Field Plate GaAs PHEMT Process

Campbell, Charles F., Dumka, Deep C., Kao, Ming-Yih, Fanning, David M.

Рік:

2011

Мова:

english

Файл:

PDF, 558 KB

english, 2011

5

GaN Takes the Lead

Campbell, Charles, Balistreri, Anthony, Kao, Ming-Yih, Dumka, Deep, Hitt, John

Журнал:

IEEE Microwave Magazine

Рік:

2012

Мова:

english

Файл:

PDF, 4.21 MB

english, 2012

6

[IEEE 2004 IEEE MTT-S International Microwave Symposium Digest - Fort Worth, TX, USA (6-11 June 2004)] 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) - A Ka/Q-band 2 Watt MMIC power amplifier using dual recess 0.15 μm PHEMT process

Shuoqi Chen,, Nayak, S., Ming-Yih Kao,, Delaney, J.

Рік:

2004

Мова:

english

Файл:

PDF, 493 KB

english, 2004

7

[IEEE IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. - Palm Springs, CA, USA (2005.11.2-2005.11.2)] IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. - Ka-band MMIC high power amplifier (4W at 30GHz) with record compact size

Keon-Shik Kong,, Nguyen, B., Nayak, S., Ming-Yih Kao,

Рік:

2005

Мова:

english

Файл:

PDF, 277 KB

english, 2005

8

[IEEE 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Monterey, CA, USA (2010.10.3-2010.10.6)] 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Development of Ka-Band GaAs pHEMTs with Output Power over 1 W/mm

Dumka, Deep C., Kao, Ming-Yih, Beam, Edward, Chou, Tso-Min, Tserng, Hua-Quen, Fanning, David M.

Рік:

2010

Мова:

english

Файл:

PDF, 244 KB

english, 2010

9

[IEEE 2006 IEEE Compound Semiconductor Integrated Circuit Symposium - San Antonio, TX (2006.11.12-2006.11.15)] 2006 IEEE Compound Semiconductor Integrated Circuit Symposium - High Performance Dual Recess 0.15-μm pHEMT for Multi-Function MMIC Applications

Ming-Yih Kao,, Sabyasachi Nayak,, Rached Hajji,, Hillyard, S.E., Ketterson, A.A.

Рік:

2006

Мова:

english

Файл:

PDF, 3.13 MB

english, 2006

10

[IEEE 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - La Jolla, CA, USA (2014.10.19-2014.10.22)] 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Miniaturization of Ka-Band High Power Amplifier by 0.15 µm GaN MMIC Technology

Kong, Kris, Kao, Ming-Yih, Nayak, Sabyasachi

Рік:

2014

Мова:

english

Файл:

PDF, 597 KB

english, 2014

11

[IEEE 2016 IEEE/MTT-S International Microwave Symposium - MTT 2016 - San Francisco, CA, USA (2016.5.22-2016.5.27)] 2016 IEEE MTT-S International Microwave Symposium (IMS) - Design and performance of 16–40GHz GaN distributed power amplifier MMICs utilizing an advanced 0.15µm GaN process

Campbell, Charles F., Nayak, Sabyasachi, Ming-Yih Kao,, Shuoqi Chen,

Рік:

2016

Мова:

english

Файл:

PDF, 427 KB

english, 2016

12

High-performance Ka-band and V-band HEMT low-noise amplifiers

Duh, K.H.G., Pane-Chane Chao, Smith, P.M., Lester, L.F., Lee, B.R., Ballingall, J.M., Ming-Yih Kao

Журнал:

IEEE Transactions on Microwave Theory and Techniques

Рік:

1988

Мова:

english

Файл:

PDF, 789 KB

english, 1988

13

[IEEE 2008 IEEE Compound Semiconductor Integrated Circuits Symposium (CSICS) - Monterey, CA, USA (2008.10.12-2008.10.15)] 2008 IEEE Compound Semiconductor Integrated Circuits Symposium - A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology

Campbell, Charles, Lee, Cathy, Williams, Victoria, Kao, Ming-Yih, Tserng, Hua-Quen, Saunier, Paul

Рік:

2008

Мова:

english

Файл:

PDF, 378 KB

english, 2008

14

[IEEE 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Monterey, CA, USA (2010.10.3-2010.10.6)] 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Design and Performance of a High Efficiency Ka-Band Power Amplifier MMIC

Campbell, Charles F., Dumka, Deep C., Kao, Ming-Yih, Fanning, David M.

Рік:

2010

Мова:

english

Файл:

PDF, 353 KB

english, 2010

15

[IEEE 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010 - Anaheim, CA, USA (2010.05.23-2010.05.28)] 2010 IEEE MTT-S International Microwave Symposium - Multi-octave GaN MMIC amplifier

Darwish, Ali M., Hung, H. Alfred, Viveiros, Edward, Kao, Ming-Yih.

Рік:

2010

Мова:

english

Файл:

PDF, 677 KB

english, 2010

16

[IEEE 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - La Jolla, CA, USA (2012.10.14-2012.10.17)] 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - A K-Band 5W Doherty Amplifier MMIC Utilizing 0.15µm GaN on SiC HEMT Technology

Campbell, Charles F., Tran, Kim, Kao, Ming-Yih, Nayak, Sabyasachi

Рік:

2012

Мова:

english

Файл:

PDF, 442 KB

english, 2012

17

[IEEE 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192) - Baltimore, MD, USA (7-12 June 1998)] 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192) - X-band InGaP PHEMTs with 70% power-added efficiency

Ming-Yih Kao,, Beam, E.A., Saunier, P., Frensley, W.R.

Рік:

1998

Мова:

english

Файл:

PDF, 331 KB

english, 1998

18

[IEEE 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1994)] Proceedings of 1994 IEEE International Electron Devices Meeting - An extremely low-noise InP-based HEMT with silicon nitride passivation

Ming-Yih Kao,, Duh, K.H.G., Pin Ho,, Pane-Chane Chao,

Рік:

1994

Мова:

english

Файл:

PDF, 307 KB

english, 1994

19

[IEEE 2009 IEEE MTT-S International Microwave Symposium Digest (MTT) - Boston, MA, USA (2009.06.7-2009.06.12)] 2009 IEEE MTT-S International Microwave Symposium Digest - V-band power amplifier MMICs exhibiting low power slump characteristics utilizing a production released 0.15-um GaAs PHEMT process

Campbell, Charles F., Moochalla, Shabbir, Daugherty, David, Taft, William J., Kao, Ming-Yih, Fanning, David

Рік:

2009

Мова:

english

Файл:

PDF, 272 KB

english, 2009

20

[IEEE 2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS) - Tel Aviv, Israel (2013.10.21-2013.10.23)] 2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013) - High efficiency Ka-band Gallium Nitride power amplifier MMICs

Campbell, Charles F., Liu, Yueying, Kao, Ming-Yih, Nayak, Sabyasachi

Рік:

2013

Мова:

english

Файл:

PDF, 528 KB

english, 2013

21

[IEEE Proceedings of IEEE International Electron Devices Meeting - San Francisco, CA, USA (1989.12.3-1989.12.6)] International Technical Digest on Electron Devices Meeting - Very high voltage AlGaAs/InGaAs pseudomorphic power HEMTs

Ming-Yih Kao,, Shih-Tsang Fu,, Pin Ho,, Smith,, Chao,, Nordheden,, Sujane Wang,

Рік:

1992

Мова:

english

Файл:

PDF, 224 KB

english, 1992

22

[IEEE 2007 IEEE/MTT-S International Microwave Symposium - Honolulu, HI, USA (2007.06.3-2007.06.8)] 2007 IEEE/MTT-S International Microwave Symposium - AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and Multi-Function MMIC Applications

Kao, Ming-Yih, Lee, Cathy, Hajji, Rached, Saunier, Paul, Tserng, Hua-Quen

Рік:

2007

Мова:

english

Файл:

PDF, 1.66 MB

english, 2007

23

SPIE Proceedings [SPIE High-Speed Electronics and Device Scaling - San Diego, United States (Sunday 18 March 1990)] High-Speed Electronics and Device Scaling - V- and W-band low-noise InAlAs/InGaAs/InP HEMTs and amplifiers

Chao, P. C., Tessmer, A. J., Kao, Ming-Yih, Duh, K. H., Ho, Pin, Smith, P. M., Ballingall, J. M., Liu, S. M. J., Jabra, Amani A., Eastman, Lester F.

Рік:

1990

Мова:

english

Файл:

PDF, 477 KB

english, 1990